Study of the interfacial properties of amorphous Silicon n type crystalline Silicon heterojunction through static coplanar conductance measurements - CentraleSupélec Access content directly
Conference Papers Year : 2009

Study of the interfacial properties of amorphous Silicon n type crystalline Silicon heterojunction through static coplanar conductance measurements

Wilfried Favre
  • Function : Author
Laboratoire de génie électrique de Paris
M. Labrune
  • Function : Author
Foudil Dadouche
  • Function : Author
Laboratoire de génie électrique de Paris
A.S. Gudovskikh
  • Function : Author
Pere Roca I Cabarrocas
Jean-Paul Kleider
Laboratoire de génie électrique de Paris
CV

Olivier Schneegans  : Connect in order to contact the contributor

https://hal-centralesupelec.archives-ouvertes.fr/hal-00446015

Submitted on : Monday, January 11, 2010-5:01:41 PM

Last modification on : Friday, March 24, 2023-2:52:52 PM

Not file

Dates and versions

hal-00446015 , version 1 (11-01-2010)

Identifiers

  • HAL Id : hal-00446015 , version 1

Cite

Wilfried Favre, M. Labrune, Foudil Dadouche, A.S. Gudovskikh, Pere Roca I Cabarrocas, et al.. Study of the interfacial properties of amorphous Silicon n type crystalline Silicon heterojunction through static coplanar conductance measurements. 23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23, 2009, Utrecht, Netherlands. ⟨hal-00446015⟩

Export

BibTeX TEI Dublin Core DC Terms EndNote Datacite

Collections

SUPELEC UPMC EC-PARIS CNRS SUP_LGEP CENTRALESUPELEC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE
46 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More