AlGaN-based multi-quantum wells emitting at 285 nm grown on a thick AlGaN relaxed buffer on AlN template

Xin Li (1) , Suresh Sundaram (1) , Youssef El Gmili (1) , Tarik Moudakir (1) , Pierre Disseix (2) , François Réveret (2) , Joël Leymarie (2) , Sophie Bouchoule (3) , Frédéric Genty (4) , Jean-Paul Salvestrini (4) , Paul L Voss (1) , Abdallah Ougazzaden (1)

1 Georgia Tech Lorraine [Metz]
2 IP - Institut Pascal
3 LPN - Laboratoire de photonique et de nanostructures
4 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes

Domains: Engineering Sciences [physics]

Xin Li, Suresh Sundaram, Youssef El Gmili, Tarik Moudakir, Pierre Disseix, et al.. AlGaN-based multi-quantum wells emitting at 285 nm grown on a thick AlGaN relaxed buffer on AlN template. 17th International Conference on MetalOrganic Vapour Phase Epitaxy, Jul 2014, Lausanne, Switzerland. pp.Mon-Poster-0-28. ⟨hal-01108899⟩