MOVPE grown periodic AlN/BAlN heterostructure with high boron content

Xin Li (1) , Suresh Sundaram (1) , Youssef El Gmili (1) , Frédéric Genty (2) , Sophie Bouchoule (3) , Gilles Patriache (3) , Pierre Disseix (4) , François Réveret (4) , Joël Leymarie (4) , Jean-Paul Salvestrini (2) , Russell Dean Dupuis , Paul L Voss (1) , Abdallah Ougazzaden (1)

1 Georgia Tech Lorraine [Metz]
2 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
3 LPN - Laboratoire de photonique et de nanostructures
4 IP - Institut Pascal

Five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE. Good periodicity of two alternative layers has been observed by both SIMS profile and Z-contrast HAADF-STEM images. The BAlN layers demonstrate columnar polycrystalline feature. The BAlN layers exhibit an emission peak by CL and absorption edge in transmission spectra at around 260 nm. The results enable the development of BAlGaN based multi-layered heterostructure for UV and deep UV applications.

Domains: Engineering Sciences [physics]

Xin Li, Suresh Sundaram, Youssef El Gmili, Frédéric Genty, Sophie Bouchoule, et al.. MOVPE grown periodic AlN/BAlN heterostructure with high boron content. ICMOVPE 2014, Jul 2014, Lausanne, Switzerland. pp.1-4. ⟨hal-01109542⟩