Characterization of N-doped multilayer graphene grown on 4H-SiC (0001)

Citation: 1649

Hakim Arezki (1) , Kuan-I Ho (2) , Alexandre Jaffré (1) , David Alamarguy (1) , J Alvarez (1) , Jean-Paul Kleider (1) , Chao-Sung Lai (2) , Mohamed Boutchich (1)

1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 Chang Gung University

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]; Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics; Engineering Sciences [physics]; Electric power; Engineering Sciences [physics]; Optics / Photonic; Engineering Sciences [physics]; Materials

Hakim Arezki, Kuan-I Ho, Alexandre Jaffré, David Alamarguy, J Alvarez, et al.. Characterization of N-doped multilayer graphene grown on 4H-SiC (0001). AIP Conference Proceedings, 2015, 1649, pp.8. ⟨10.1063/1.4913537⟩. ⟨hal-01239163⟩