Hydrogenated amorphous silicon characterization from steady state photoconductive measurements

Leonardo Kopprio; Christophe Longeaud; Javier Schmidt

doi:10.1088/1361-6641/ab0765

Journal Articles Semiconductor Science and Technology Year : 2019

Hydrogenated amorphous silicon characterization from steady state photoconductive measurements

(1) , (2) , (1)

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Leonardo Kopprio

Function : Author

Universidad Nacional del Litoral [Santa Fe]

Christophe Longeaud

Function : Author
PersonId : 6409
IdHAL : christophe-longeaud
IdRef : 076747425

Laboratoire Génie électrique et électronique de Paris

Javier Schmidt

Function : Author

Universidad Nacional del Litoral [Santa Fe]

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Physics [physics] Condensed Matter [cond-mat]

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https://hal-centralesupelec.archives-ouvertes.fr/hal-02280592

Submitted on : Wednesday, October 30, 2019-5:37:31 PM

Last modification on : Thursday, March 9, 2023-10:30:17 AM

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hal-02280592 , version 1 (30-10-2019)

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HAL Id : hal-02280592 , version 1
DOI : 10.1088/1361-6641/ab0765

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Leonardo Kopprio, Christophe Longeaud, Javier Schmidt. Hydrogenated amorphous silicon characterization from steady state photoconductive measurements. Semiconductor Science and Technology, 2019, 34 (4), ⟨10.1088/1361-6641/ab0765⟩. ⟨hal-02280592⟩

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Hydrogenated amorphous silicon characterization from steady state photoconductive measurements

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