Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

A. Ougazzaden; D.J. Rogers; F. Hosseini Teherani; T. Moudakir; S. Gautier; T. Aggerstam; S. Ould Saad; J. Martin; Zakaria Djebbour; O. Durand; G. Garry; A. Lusson; D. Mcgrouther; J.N. Chapman

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Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

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A. Ougazzaden

Function : Author
PersonId : 758530
ORCID : 0000-0002-9959-5280

D.J. Rogers

Function : Author

F. Hosseini Teherani

Function : Author

T. Moudakir

Function : Author

S. Gautier

Function : Author

T. Aggerstam

Function : Author

S. Ould Saad

Function : Author
PersonId : 7475
IdHAL : sidi-ould-saad-hamady
ORCID : 0000-0002-0480-6381
IdRef : 061189022

CV

J. Martin

Function : Author
PersonId : 755151
ORCID : 0000-0002-1193-4453

Zakaria Djebbour

Function : Author

Laboratoire de génie électrique de Paris

O. Durand

Function : Author

G. Garry

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A. Lusson

Function : Author

D. Mcgrouther

Function : Author

J.N. Chapman

Function : Author

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https://hal-centralesupelec.archives-ouvertes.fr/hal-00322269

Submitted on : Wednesday, September 17, 2008-10:41:24 AM

Last modification on : Friday, March 24, 2023-2:52:51 PM

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hal-00322269 , version 1 (17-09-2008)

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A. Ougazzaden, D.J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, et al.. Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. E-MRS 2007 Spring Meeting, 2007, France. ⟨hal-00322269⟩

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Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

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